? 2016 ixys corporation, all rights reserved high voltage xpt tm igbt w/ diode IXYX25N250CV1HV v ces = 2500v i c110 = 25a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 4.0v t fi(typ) = 246ns symbol test conditions maximum ratings v ces t j = 25c to 175c 2500 v v cgr t j = 25c to 175c, r ge = 1m ? 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 95 a i c110 t c = 110c 25 a i f110 t c = 110c 30 a i cm t c = 25c, 1ms 235 a ssoa v ge = 15v, t vj = 150c, r g = 5 ? i cm = 100 a (rbsoa) clamped inductive load 1500 v p c t c = 25c 937 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force 20..120 /4.5..27 n/lb weight 6 g ds100735.(6/16) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 2500 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 a t j = 100c 100 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 25a, v ge = 15v, note 1 3.4 4.0 v t j = 150c 4.7 v advance technical information features ? high voltage package ? high blocking voltage ? high peak current capability ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches to-247plus-hv (ixyx...hv) g e c tab g = gate e = emitter c = collector tab = collector
ixys reserves the right to change limits, test conditions, and dimensions. IXYX25N250CV1HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 reverse sonic diode (frd) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 25a, v ge = 0v, note 1 3.5 v t j = 150c 3.1 v i rm 36 a t rr 220 ns r thjc 0.32 c/w i f = 25a, v ge = 0v, ????????????????????? t j = 150c -d i f /dt = 400a/ ? s ?? v r = 1200v notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 25a, v ce = 10v, note 1 16 27 s r gi gate input resistance 2.8 ? c ies 3060 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 166 pf c res 43 pf q g(on) 147 nc q ge i c = 25a, v ge = 15v, v ce = 0.5 ? v ces 16 nc q gc 68 nc t d(on) 15 ns t ri 34 ns e on 8.3 mj t d(off) 230 ns t fi 246 ns e off 7.3 mj t d(on) 18 ns t ri 33 ns e on 11.0 mj t d(off) 225 ns t fi 350 ns e off 10.5 mj r thjc 0.16 c/w r thcs 0.15 c/w inductive load, t j = 150c i c = 25a, v ge = 15v v ce = 0.5 ? v ces , r g = 5 ? note 2 inductive load, t j = 25c i c = 25a, v ge = 15v v ce = 0.5 ? v ces , r g = 5 ? note 2 to-247plus-hv outline 1 - gate 2,4 - emitter 3 - collector a e1 d1 d2 e2 r e a2 a1 2x a3 l1 d3 b e c d e1 e3 q b1 3x 4x 3x 1 2 3 4
? 2016 ixys corporation, all rights reserved IXYX25N250CV1HV fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 00.511.522.533.544.555.5 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 9v 5v 7v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 25v 19v 15v 5v 11v 7v 9v 13v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 012345678 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 25a i c = 12.5a i c = 50a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 5 7 9 11 13 15 17 19 21 23 25 v ge - volts v ce - volts i c = 50a t j = 25oc 25a 12.5a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYX25N250CV1HV fig. 12. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 11. forward-bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 1ms 10ms v ce(sat) limi t dc 100s 25s 100ms fig. 7. transconductance 0 4 8 12 16 20 24 28 32 36 40 44 0 102030405060708090 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 100 400 700 1000 1300 1600 1900 2200 2500 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 1250v i c = 25a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2016 ixys corporation, all rights reserved fig. 13. inductive switching energy loss vs. gate resistance 2 6 10 14 18 22 26 5 10152025303540455055 r g - ohms e off - millijoules 8 12 16 20 24 28 32 e on - millijoules e off e on t j = 150oc , v ge = 15v v ce = 1250v i c = 25a i c = 50a fig. 16. inductive turn-off switching times v s. gate resistance 100 150 200 250 300 350 400 450 500 5 10152025303540455055 r g - ohms t f i - nanoseconds 0 150 300 450 600 750 900 1050 1200 t d(off) - nanoseconds t f i t d(off) t j = 150oc, v ge = 15v v ce = 1250v i c = 50a i c = 25a fig. 14. inductive switching energy loss vs. collector current 0 4 8 12 16 20 24 10 15 20 25 30 35 40 45 50 i c - amperes e off - millijoules 0 4 8 12 16 20 24 e on - millijoules e off e on r g = 5 ? ????? v ge = 15v v ce = 1250v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 2 6 10 14 18 22 26 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 4 8 12 16 20 24 28 e on - millijoules e off e on r g = 5 ? ???? v ge = 15v v ce = 1250v i c = 25a i c = 50a fig. 17. inductive turn-off switching times vs. collector current 0 100 200 300 400 500 600 10 15 20 25 30 35 40 45 50 i c - amperes t f i - nanoseconds 0 100 200 300 400 500 600 t d(off) - nanoseconds t f i t d(off) r g = 5 ? ? , v ge = 15v v ce = 1250v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 60 140 220 300 380 460 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 100 150 200 250 300 350 t d(off) - nanoseconds t f i t d(off) r g = 5 ? ? , v ge = 15v v ce = 1250v i c = 50a i c = 25a IXYX25N250CV1HV
ixys reserves the right to change limits, test conditions, and dimensions. IXYX25N250CV1HV fig. 20. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 10 15 20 25 30 35 40 45 50 i c - amperes t r i - nanoseconds 10 12 14 16 18 20 22 24 26 28 t d(on) - nanoseconds t r i t d(on) r g = 5 ? ? , v ge = 15v v ce = 1250v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 12 14 16 18 20 22 24 t d(on) - nanoseconds t r i t d(on) r g = 5 ? ? , v ge = 15v v ce = 1250v i c = 50a i c = 25a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 5 10152025303540455055 r g - ohms t r i - nanoseconds 0 10 20 30 40 50 60 70 t d(on) - nanoseconds t r i t d(on) t j = 150oc, v ge = 15v v ce = 1250v i c = 25a i c = 50a
? 2016 ixys corporation, all rights reserved fig. 22. diode forward characteristics 0 20 40 60 80 100 120 140 012345678 v f (v) i f (a) t j = 150oc t j = 25oc fig. 23. reverse recovery charge vs. -di f /dt 2 3 4 5 6 7 8 100 200 300 400 500 600 -di f / dt (a/s) q rr (c) i f = 50a 12.5a 25a t j = 150oc v r = 1200v fig. 23. reverse recovery current vs. -di f /dt 10 20 30 40 50 60 70 100 200 300 400 500 600 di f /dt (a/s) i rr (a) 12.5a 25a i f = 50a t j = 150oc v r = 1200v fig. 24. reverse recovery time vs. -di f /dt 100 150 200 250 300 350 400 450 500 550 100 200 300 400 500 600 -di f /dt (a/s) t rr (ns) 12.5a 25a i f = 50a t j = 150oc v r = 1200v fig. 26. maximum transient thermal impedance (diode) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 25. dynamic parameters q rr, i rr vs. junction temperature 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 1200v i f = 25a -dif/dt = 400a/s ixys ref: ixy_25n250cv1hv(7t-at628) 6-24-16 IXYX25N250CV1HV
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